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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2928 DESCRIPTION *With TO-3 package *High breakdown voltage APPLICATIONS *For high voltage,high speed and high power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7 5 7 2.5 80 150 -45~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO ICEO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ; RBE= IE=10mA ; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=1200V ;IE=0 VCE=650V ; RBE= IC=0.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 800 7 TYP. 2SC2928 MAX UNIT V V 1.0 1.5 100 100 V V A A Switching times ton ts tf Turn-on time Storage time Fall time IC=3.0A; VCC=250V IB1=0.6A ,IB2=-1.5A 1.0 3.0 1.0 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2928 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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